MMIC- Technologie
Figure 1: GaAs-MeSFET Powermodul in MMIC Technologie
MMIC- technology (Monolithic Microwave Integrated Circuit) is a semiconductor process technology. It can be used to obtain active elements on the same silicon substrate. These circuits can be used up to very high frequencies.
GaAs-MESFETs are more often used by radar sets in solid-state high power amplifiers.
| Technology | use area | state | remarks |
|---|---|---|---|
| Silicium- bipolar and CMOS | <6 GHz | Very mature, commercially available, good CAD support. | BJT: high amplifications, small tolerances, Silicium substratum: dielectric with high losses. Very high mask costs for custom-designed MMICs. Suitable for mixedly analog/digital wirings. |
| Silicium-Germanium- bipolar (Si-Ge) | <10 GHz | In short time on high level developed. CAD support is under construction. | Very complex and expensive process. Suitable for mixedly analog/digital wirings. |
| GaAs-MESFET | <10 GHz | Mature, commercial well available for custom-designed MMICs. Good CAD support. | Simple technology: economical for custom-designed wirings with small quantities. Suitable for high power amplifiers. |
| GaAs-hetero-bipolar transistors (HBT) | <20 GHz | In commercial introduction. CAD support is under construction. | Suitable for fastest digital circuits, oscillators and power amplifiers. |
| Indium-phosphid- HEMT (InP) | <100 GHz | In commercial introduction. CAD support is under construction. | InP-HEMT: best microwave qualities for small signals and low noise. |
| Indium-phosphid-HBT (InP) | <230 GHz | In commercial introduction. | Suitable for fastest digital circuits. |
Table 1: Overview MMIC- Technologies (with the state of 2003)